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Intel and Micron present their memory technology faster and denser than conventional

We currently live in a time characterized by the number of connected devices and the generation of large amounts of data, which must be stored and quickly accessed to allow their processing. In this sense, the companies Intel and Micron have presented today, through a live keynote, their new technology called 3D XPoint, created from scratch, which is the result of more than a decade of research and development.

With this new technology, already in production, both companies want to face the new technological challenges that arise in the current era, pointing out that it is a kind of non-volatile memory with much lower latencies, being up to 1,000 times Faster than NAND Flash memory, which we currently have available on USB sticks and solid state storage drives (SSDs). The architecture of the new technology completely dispenses with transistors, based on the change of properties of the unique compounds of the materials, which vary their resistance, forming a complex three-dimensional board pattern, offering up to ten times the density with respect to memory. conventional.

It also highlights that it is a technology of high performance, high resistance and high storage capacity, all at an affordable price. In this sense, the same unit of this memory allows storing about 128 Gb of data.

Regarding the applications of the new technology, they can range from machine learning for real-time monitoring of diseases to offering immersive capabilities in computer games under 8K resolution (UHDV), according to the company in a statement. .